HUAYI HY15P03C2

HUAYI · FETs & Power MOSFETs · MPN HY15P03C2

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Specifications

Gate Charge(Qg)90nC@10V
Configuration-
Drain to Source Voltage30V
Output Capacitance(Coss)506pF
Current - Continuous Drain(Id)60A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation52W
Reverse Transfer Capacitance (Crss@Vds)310pF
RDS(on)8.5mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)4.287nF

Technical details

P-Channel 30V 60A 52W Surface Mount DFN-8(5.2x5.9)

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