HUAYI · FETs & Power MOSFETs · MPN HY1506C2
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| Gate Charge(Qg) | 52.6nC |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 187pF |
| Current - Continuous Drain(Id) | 48A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 48W |
| Reverse Transfer Capacitance (Crss@Vds) | 142pF |
| RDS(on) | 15mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.286nF |
| Type | N-Channel |
N-Channel 60V 48A 48W Surface Mount TDSON-8(5.2x5.9)