HUAYI HY1503C1

HUAYI · FETs & Power MOSFETs · MPN HY1503C1

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Specifications

Gate Charge(Qg)14.6nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)150pF
Current - Continuous Drain(Id)34A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation17.8W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)12.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)680pF
TypeN-Channel

Technical details

N-Channel 30V 34A 17.8W Surface Mount DFN3x3-8L

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