HUAYI · FETs & Power MOSFETs · MPN HY1420P
No reviews yet — be the first to review HUAYI HY1420P.
| Gate Charge(Qg) | 53nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 36A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 180W |
| Reverse Transfer Capacitance (Crss@Vds) | 24pF |
| RDS(on) | 57mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.444nF |
N-Channel 200V 36A 180W Through Hole TO-220FB-3L