HUAYI HY1420C2

HUAYI · FETs & Power MOSFETs · MPN HY1420C2

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Specifications

Gate Charge(Qg)53nC@10V
Drain to Source Voltage200V
Current - Continuous Drain(Id)31A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation125W
RDS(on)57mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)97pF
Number1 N-channel
Input Capacitance(Ciss)2.57nF

Technical details

200V 31A 125W 57mΩ@10V 1 N-channel PDFN-8(5x6) Single FETs, MOSFETs RoHS

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