HUAYI · FETs & Power MOSFETs · MPN HY1420C2
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| Gate Charge(Qg) | 53nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 31A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 125W |
| RDS(on) | 57mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 97pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.57nF |
200V 31A 125W 57mΩ@10V 1 N-channel PDFN-8(5x6) Single FETs, MOSFETs RoHS