HUAYI · FETs & Power MOSFETs · MPN HY1310D
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| Gate Charge(Qg) | 60nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 115pF |
| Current - Continuous Drain(Id) | 33A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 54W |
| Reverse Transfer Capacitance (Crss@Vds) | 102pF |
| RDS(on) | 26mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.9nF |
| Type | N-Channel |
100V 33A 3V 54W 26mΩ@4.5V 1 N-channel N-Channel TO-252-2 Single FETs, MOSFETs RoHS