HUAYI · FETs & Power MOSFETs · MPN HY12P03S
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| Gate Charge(Qg) | 34nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 370pF |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 3.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 295pF |
| RDS(on) | 20.5mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.4nF |
| Type | P-Channel |
30V 12A 3V 3.1W 20.5mΩ@4.5V 1 P-Channel P-Channel SOP-8 Single FETs, MOSFETs RoHS