HUAYI · FETs & Power MOSFETs · MPN HY12P03C2
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| Gate Charge(Qg) | 34nC |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 469pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 42W |
| Reverse Transfer Capacitance (Crss@Vds) | 399pF |
| RDS(on) | 16mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.814nF |
| Type | P-Channel |
P-Channel 30V 50A 42W Surface Mount DFN-8(5.2x5.9)