HUAYI · FETs & Power MOSFETs · MPN HY1106S
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| Gate Charge(Qg) | 52.5nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 188pF |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 3.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 142pF |
| RDS(on) | 17mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.286nF |
| Type | N-Channel |
N-Channel 60V 11A 3.5W Surface Mount SOP-8