HUAYI · FETs & Power MOSFETs · MPN HY1001P
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| Gate Charge(Qg) | 79nC |
|---|---|
| Drain to Source Voltage | 70V |
| Output Capacitance(Coss) | 284pF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 115W |
| Reverse Transfer Capacitance (Crss@Vds) | 214pF |
| RDS(on) | 8.5mΩ@10V |
| Number | - |
| Input Capacitance(Ciss) | 4.17nF |
| Type | N-Channel |
70V 80A 4V 115W 8.5mΩ@10V N-Channel TO-220FB-3 Single FETs, MOSFETs RoHS