HUAYI · FETs & Power MOSFETs · MPN HY1001D
No reviews yet — be the first to review HUAYI HY1001D.
| Drain to Source Voltage | 70V |
|---|---|
| Gate Charge(Qg) | 82nC@10V |
| Output Capacitance(Coss) | 285pF |
| Current - Continuous Drain(Id) | 70A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 75W |
| RDS(on) | 8.6mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 220pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.2nF |
| Type | N-Channel |
N-Channel 70V 70A 75W Surface Mount TO-252-2L