HUAYI · FETs & Power MOSFETs · MPN HY0C20C
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| Gate Charge(Qg) | 10nC@4.5V |
|---|---|
| Configuration | Common Drain |
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 1.56W |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF |
| RDS(on) | 14mΩ@2.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 670pF |
| Type | N-Channel |
20V 12A 1.5V 1.56W 14mΩ@2.5V 2 N-Channel N-Channel DFN-6L(2x3) Single FETs, MOSFETs RoHS