HUAYI · FETs & Power MOSFETs · MPN HY050N08P
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| Gate Charge(Qg) | 64.3nC@10V |
|---|---|
| Drain to Source Voltage | 85V |
| Output Capacitance(Coss) | 1.649nF |
| Current - Continuous Drain(Id) | 105A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 166W |
| Reverse Transfer Capacitance (Crss@Vds) | 76pF |
| RDS(on) | 4.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.417nF |
| Type | N-Channel |
85V 105A 4V 166W 4.7mΩ@10V 1 N-channel N-Channel TO-220FB-3L Single FETs, MOSFETs RoHS