HUAYI · FETs & Power MOSFETs · MPN HY045N10B
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| Gate Charge(Qg) | 67.5nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 2.842nF |
| Current - Continuous Drain(Id) | 120A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 221W |
| Reverse Transfer Capacitance (Crss@Vds) | 174.6pF |
| RDS(on) | 5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.4522nF |
| Type | N-Channel |
100V 120A 4V 221W 5mΩ@10V 1 N-channel N-Channel TO-263-2 Single FETs, MOSFETs RoHS