HUAYI · FETs & Power MOSFETs · MPN HY029N10B6
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| Gate Charge(Qg) | 150nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 280A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 405W |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF |
| RDS(on) | 3mΩ@10V |
| Number | - |
| Input Capacitance(Ciss) | 10.8nF |
100V 280A 4V 405W 3mΩ@10V TO-263-6 Single FETs, MOSFETs RoHS