HUASHUO SI2302

HUASHUO · FETs & Power MOSFETs · MPN SI2302

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)3.5nC@4.5V
Output Capacitance(Coss)39pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation710mW
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)60mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)180pF
TypeN-Channel

Technical details

N-Channel 20V 3A 0.71W Surface Mount SOT-23

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