HUASHUO · FETs & Power MOSFETs · MPN HSY021N12A
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| Gate Charge(Qg) | 204nC@10V |
|---|---|
| Drain to Source Voltage | 120V |
| Current - Continuous Drain(Id) | 200A |
| Output Capacitance(Coss) | 2.57nF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 278W |
| RDS(on) | 1.8mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.86nF |
| Type | N-Channel |
120V 200A 2.8V 278W 1.8mΩ@10V 1 N-channel N-Channel TOLL-8 Single FETs, MOSFETs RoHS