HUASHUO · FETs & Power MOSFETs · MPN HSY012N10
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| Gate Charge(Qg) | 160nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 300A |
| Output Capacitance(Coss) | 1.72nF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 500W |
| Reverse Transfer Capacitance (Crss@Vds) | 188pF |
| RDS(on) | 1.25mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11.37nF |
| Type | N-Channel |
100V 300A 3V 500W 1.25mΩ@10V 1 N-channel N-Channel TOLL-8 Single FETs, MOSFETs RoHS