HUASHUO · FETs & Power MOSFETs · MPN HSY011N10
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| Gate Charge(Qg) | 140nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 4.468nF |
| Current - Continuous Drain(Id) | 365A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 310W |
| RDS(on) | 1.05mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 75pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10.085nF |
| Type | N-Channel |
100V 365A 3V 310W 1.05mΩ@10V 1 N-channel N-Channel TOLL-8 Single FETs, MOSFETs RoHS