HUASHUO · FETs & Power MOSFETs · MPN HSY010N04A
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| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 140nC@10V |
| Current - Continuous Drain(Id) | 396A |
| Output Capacitance(Coss) | 3.406nF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 272W |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF |
| RDS(on) | 0.85mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.805nF |
| Type | N-Channel |
40V 396A 3V 272W 0.85mΩ@10V 1 N-channel N-Channel TOLL-8 Single FETs, MOSFETs RoHS