HUASHUO HSY0076A

HUASHUO · FETs & Power MOSFETs · MPN HSY0076A

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Specifications

Gate Charge(Qg)215nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)320A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation333W
Reverse Transfer Capacitance (Crss@Vds)388pF
RDS(on)1.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)13.37nF

Technical details

N-Channel 100V 320A 333W Surface Mount TOLL

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