HUASHUO · FETs & Power MOSFETs · MPN HSX80N20
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| Gate Charge(Qg) | 115nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 370W |
| RDS(on) | 20mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.49nF |
N-Channel 200V 80A 370W Through Hole TO-247