HUASHUO · FETs & Power MOSFETs · MPN HSX044N25
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| Gate Charge(Qg) | 155nC@10V |
|---|---|
| Drain to Source Voltage | 250V |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 350W |
| Reverse Transfer Capacitance (Crss@Vds) | 85pF |
| RDS(on) | 44mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.547nF |
| Type | N-Channel |
N-Channel 250V 55A 350W Through Hole TO-247