HUASHUO · FETs & Power MOSFETs · MPN HSW8816
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| Gate Charge(Qg) | 6nC@4.5V |
|---|---|
| Drain to Source Voltage | 16V |
| Output Capacitance(Coss) | 110pF |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | 1.4W |
| RDS(on) | 12mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 690pF |
| Type | N-Channel |
16V 6A 700mV 1.4W 12mΩ@4.5V 1 N-channel N-Channel SOT23-6L Single FETs, MOSFETs RoHS