HUASHUO · FETs & Power MOSFETs · MPN HSW8810
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| Gate Charge(Qg) | 10.4nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 66pF |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 1.25W |
| Reverse Transfer Capacitance (Crss@Vds) | 63pF |
| RDS(on) | 20mΩ@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 630pF |
| Type | N-Channel |
N-Channel Array 20V 6A 1.25W Surface Mount SOT-23-6L