HUASHUO HSW6822

HUASHUO · FETs & Power MOSFETs · MPN HSW6822

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)6.5nC@4.5V
Output Capacitance(Coss)69pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation1.7W
RDS(on)22mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)63pF
Number2 N-Channel
Input Capacitance(Ciss)480pF
TypeN-Channel

Technical details

N-Channel Array 20V 5A 1.7W Surface Mount SOT-23-6L

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