HUASHUO · FETs & Power MOSFETs · MPN HSW6815
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| Gate Charge(Qg) | 6.4nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 104pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 750mW |
| Reverse Transfer Capacitance (Crss@Vds) | 94pF |
| RDS(on) | 45mΩ@4.5V |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 680pF |
| Type | P-Channel |
P-Channel 20V 4A 0.75W Surface Mount SOT-23-6L