HUASHUO · FETs & Power MOSFETs · MPN HSW6811
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| Gate Charge(Qg) | 4.3nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 650mV |
| Pd - Power Dissipation | 1W |
| RDS(on) | 130mΩ@4.5V |
| Number | 2 P-Channel |
| Type | P-Channel |
P-Channel 20V 2A 1W Surface Mount SOT-23-6L