HUASHUO · FETs & Power MOSFETs · MPN HSW6800
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| Gate Charge(Qg) | 9.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.3V |
| Pd - Power Dissipation | 1.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 73pF |
| RDS(on) | 45mΩ@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 880pF |
| Type | N-Channel |
N-Channel Array 30V 4A 1.4W Surface Mount SOT-23-6L