HUASHUO · FETs & Power MOSFETs · MPN HSW6113
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 11.8nC@4.5V |
| Current - Continuous Drain(Id) | 4.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 1.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 115mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.08nF |
| Type | P-Channel |
P-Channel 60V 4.5A 1.8W Surface Mount SOT-23-6L