HUASHUO · FETs & Power MOSFETs · MPN HSW4614C
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| Gate Charge(Qg) | 6.4nC@10V;7.4nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 3A |
| Output Capacitance(Coss) | 31pF;33pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 1.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| RDS(on) | 36mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 318pF;412pF |
| Type | N-Channel + P-Channel |
40V 3A 1.6V 1.4W 36mΩ@10V 1 N-Channel + 1 P-Channel N-Channel + P-Channel SOT-23-6L Single FETs, MOSFETs RoHS