HUASHUO HSW4602

HUASHUO · FETs & Power MOSFETs · MPN HSW4602

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Specifications

Gate Charge(Qg)8.4nC@10V;9.8nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)96pF;66pF
Current - Continuous Drain(Id)4.5A;3.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V;1.4V
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)73pF;53pF
RDS(on)24mΩ@10V;56mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)402pF;490pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 1.25W Surface Mount SOT-23-6

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