HUASHUO HSW3415

HUASHUO · FETs & Power MOSFETs · MPN HSW3415

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Specifications

Gate Charge(Qg)8.4nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)113pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))900mV
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)35mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)755pF
TypeP-Channel

Technical details

P-Channel 20V 5A 1.4W Surface Mount SOT-23-6L

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