HUASHUO · FETs & Power MOSFETs · MPN HSW3004
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 6nC@4.5V;8.2nC@4.5V |
| Current - Continuous Drain(Id) | 4A |
| Output Capacitance(Coss) | 76pF;60pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 800mV |
| Pd - Power Dissipation | 1.4W |
| RDS(on) | 28mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 630pF;675pF |
| Type | N-Channel + P-Channel |
30V 4A 800mV 1.4W 28mΩ@4.5V 1 N-Channel + 1 P-Channel N-Channel + P-Channel SOT-23-6L Single FETs, MOSFETs RoHS