HUASHUO · FETs & Power MOSFETs · MPN HSW2N15
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| Gate Charge(Qg) | 8.3nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Output Capacitance(Coss) | 33pF |
| Current - Continuous Drain(Id) | 1.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 1.56W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 480mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 350pF |
| Type | N-Channel |
N-Channel 150V 1.4A 1.56W Surface Mount SOT-23-6L