HUASHUO · FETs & Power MOSFETs · MPN HSW2N10D
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| Gate Charge(Qg) | 5.5nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 700mW |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| RDS(on) | 260mΩ@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 330pF |
| Type | N-Channel |
N-Channel Array 100V 2A 0.7W Surface Mount SOT-23-6L