HUASHUO · FETs & Power MOSFETs · MPN HSW2004
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 10nC@4.5V |
| Output Capacitance(Coss) | 500pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 1.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 299pF |
| RDS(on) | - |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 500pF;661pF |
| Type | N-Channel + P-Channel |
N-Channel+P-Channel Array 20V 4A 1.4W Surface Mount SOT-23-6