HUASHUO HSU90N03

HUASHUO · FETs & Power MOSFETs · MPN HSU90N03

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Specifications

Gate Charge(Qg)80nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation115W
Reverse Transfer Capacitance (Crss@Vds)280pF
RDS(on)4.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.209nF

Technical details

N-Channel 30V 90A 115W Surface Mount TO-252

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