HUASHUO HSU90N02

HUASHUO · FETs & Power MOSFETs · MPN HSU90N02

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Specifications

Gate Charge(Qg)50nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation82W
RDS(on)2.7mΩ@4.5V
Number1 N-channel
TypeN-Channel

Technical details

N-Channel 20V 90A 82W Surface Mount TO-252-2

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