HUASHUO HSU8119

HUASHUO · FETs & Power MOSFETs · MPN HSU8119

No reviews yet — be the first to review HUASHUO HSU8119.

Specifications

Gate Charge(Qg)190nC
Drain to Source Voltage80V
Output Capacitance(Coss)390pF
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation130W
RDS(on)17mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)50pF
Number1 P-Channel
Input Capacitance(Ciss)13.3nF
TypeP-Channel

Technical details

P-Channel 80V 70A 130W Surface Mount TO-252-2L

Related FETs & Power MOSFETs