HUASHUO HSU80N03

HUASHUO · FETs & Power MOSFETs · MPN HSU80N03

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage30V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation115W
Reverse Transfer Capacitance (Crss@Vds)280pF
RDS(on)4.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.29nF

Technical details

N-Channel 30V 80A 115W Surface Mount TO-252-2

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