HUASHUO HSU70P06

HUASHUO · FETs & Power MOSFETs · MPN HSU70P06

No reviews yet — be the first to review HUASHUO HSU70P06.

Specifications

Gate Charge(Qg)140nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)494pF
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation135W
Reverse Transfer Capacitance (Crss@Vds)291pF
RDS(on)12mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)8.635nF
TypeP-Channel

Technical details

P-Channel 60V 70A 135W Surface Mount TO-252-2

Related FETs & Power MOSFETs