HUASHUO HSU6P20

HUASHUO · FETs & Power MOSFETs · MPN HSU6P20

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Specifications

Configuration-
Gate Charge(Qg)82nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)49pF
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation38W
Reverse Transfer Capacitance (Crss@Vds)39pF
RDS(on)810mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.155nF

Technical details

P-Channel 200V 6A 38W Surface Mount TO-252

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