HUASHUO HSU6117

HUASHUO · FETs & Power MOSFETs · MPN HSU6117

No reviews yet — be the first to review HUASHUO HSU6117.

Specifications

Drain to Source Voltage60V
Gate Charge(Qg)85nC@10V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation90W
Reverse Transfer Capacitance (Crss@Vds)241pF
RDS(on)14mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)4.635nF

Technical details

P-Channel 60V 60A 90W Surface Mount TO-252-2

Related FETs & Power MOSFETs