HUASHUO HSU6115

HUASHUO · FETs & Power MOSFETs · MPN HSU6115

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Specifications

Gate Charge(Qg)25nC@4.5V
Drain to Source Voltage60V
Output Capacitance(Coss)224pF
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation52.1W
Reverse Transfer Capacitance (Crss@Vds)141pF
RDS(on)25mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.635nF
TypeP-Channel

Technical details

P-Channel 60V 35A 52.1W Surface Mount TO-252-2

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