HUASHUO HSU60P03

HUASHUO · FETs & Power MOSFETs · MPN HSU60P03

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Specifications

Gate Charge(Qg)33nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)508pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation52.1W
Reverse Transfer Capacitance (Crss@Vds)421pF
RDS(on)7.5mΩ@10V;11mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)3.448nF
TypeP-Channel

Technical details

P-Channel 30V 60A 52.1W Surface Mount TO-252-2

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