HUASHUO HSU60P02

HUASHUO · FETs & Power MOSFETs · MPN HSU60P02

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Specifications

Gate Charge(Qg)44nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)509pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))650mV
Pd - Power Dissipation70W
Reverse Transfer Capacitance (Crss@Vds)431pF
RDS(on)8.5mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)4.6nF
TypeP-Channel

Technical details

P-Channel 20V 60A 70W Surface Mount TO-252

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