HUASHUO HSU6032A

HUASHUO · FETs & Power MOSFETs · MPN HSU6032A

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Specifications

Gate Charge(Qg)61nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)75A
Output Capacitance(Coss)211pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)181pF
RDS(on)6.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.207nF
TypeN-Channel

Technical details

60V 75A 4V 100W 6.7mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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