HUASHUO HSU6002

HUASHUO · FETs & Power MOSFETs · MPN HSU6002

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Specifications

Gate Charge(Qg)5.5nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)17A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation42W
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)70mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)695pF

Technical details

60V 17A 1.2V 42W 70mΩ@10V 1 N-channel TO-252-2 Single FETs, MOSFETs RoHS

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