HUASHUO HSU5N20

HUASHUO · FETs & Power MOSFETs · MPN HSU5N20

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage200V
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.7W
Reverse Transfer Capacitance (Crss@Vds)4.5pF
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)900pF

Technical details

N-Channel 200V 5A 2.7W Surface Mount TO-252

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